Band offsets and properties ofSi1−xGex/Si material systems
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference14 articles.
1. Photoluminescence quenching in Si1−xGex/Si multiple quantum wells grown with atomic hydrogen
2. Modeling and characterization of a strained Si/Si1−xGex transistor with δ-doped layers
3. Growth of Si1−xGex(011) on Si(011)16×2 by gas-source molecular beam epitaxy: Growth kinetics, Ge incorporation, and surface phase transitions
4. Heterojunction band lineups in Si-Ge alloys using spatially resolved electron-energy-loss spectroscopy
5. Elementary theory of heterojunctions
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4. Reformulated tight binding calculation for band discontinuity at CdTe/HgxCd1−xTe heterointerfaces and their type I–type III transitions;Materials Science and Engineering: B;2005-02
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