Modeling and characterization of a strained Si/Si1−xGex transistor with δ-doped layers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.370909
Reference20 articles.
1. High-transconductance n-type Si/SiGe modulation-doped field-effect transistors
2. Magnetotransport measurements and low-temperature scattering times of electron gases in high-quality Si/Si1−xGexheterostructures
3. Band alignments of coherently strained GexSi1−x/Si heterostructures on 〈001〉 GeySi1−ysubstrates
4. Modeling of Submicron Si1—xGex-Based MOSFETs by Self-Consistent Monte Carlo Simulation
5. Theoretical calculations of heterojunction discontinuities in the Si/Ge system
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Elimination of parasitic channels in strained-Si p-channel metal-oxide-semiconductor field-effect transistors;Semiconductor Science and Technology;2001-02-15
2. Band offsets and properties ofSi1−xGex/Si material systems;Superlattices and Microstructures;2001-01
3. Limited number of carriers transferred to the strained-Si channel in the SiGe/Si/SiGe modulation-doped field-effect transistor;Thin Solid Films;2000-07
4. Interface-controlled Si/SiGe-heterostructure growth and its device application;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2000
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