Investigation and Fabrication of the Semiconductor Devices Based on Metamorphic InAlAs/InGaAs/InAlAs Nanoheterostructures for THz Applications-Reference-Cited by-同舟云学术

Investigation and Fabrication of the Semiconductor Devices Based on Metamorphic InAlAs/InGaAs/InAlAs Nanoheterostructures for THz Applications

Published:2015-03 Issue:01n02 Volume:24 Page:1520001
ISSN:0129-1564
Container-title:International Journal of High Speed Electronics and Systems
language:en
Short-container-title:Int. J. Hi. Spe. Ele. Syst.

Author:

Lavrukhin D. V.¹,Yachmenev A. E.¹,Galiev R. R.¹,Bugaev A. S.¹,Fedorov Y. V.¹,Khabibullin R. A.¹,Ponomarev D. S.¹,Maltsev P. P.¹

Affiliation:

1. Institute of Ultra-High-Frequency Semiconductor Electronics of RAS, Russia, Moscow, 117105, Russia

Abstract

A metamorphic high electron mobility transistor (MHEMT) with “zig–zag” –like gate of a length of 46 nm and cut-off frequencies for the current and power gain [Formula: see text] THz and [Formula: see text] THz respectively was fabricated on the base of InAlAs/InGaAs/InAlAs nanoheterostructure.

Publisher

World Scientific Pub Co Pte Lt

Subject

Electrical and Electronic Engineering,Hardware and Architecture,Electronic, Optical and Magnetic Materials

Link

https://www.worldscientific.com/doi/pdf/10.1142/S0129156415200013

Reference4 articles.

1. Effect of (100) GaAs substrate misorientation on electrophysical parameters, structural properties and surface morphology of metamorphic HEMT nanoheterostructures InGaAs/InAlAs

2. MHEMT with a power-gain cut-off frequency of f max = 0.63 THz on the basis of a In0.42Al0.58As/In0.42Ga0.58As/In0.42Al0.58As/GaAs nanoheterostructure

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