INFLUENCE OF WAVEGUIDE LAYERS ON DEEP VIOLET InGaN DQW LASERS PERFORMANCE

Abstract

This paper focuses on the performance characteristics of laser diodes (LDs) to improve output light emission properties. The optical and electrical properties such as threshold current, output power, slope efficiency, differential quantum efficiency, optical intensity and optical confinement factor has been compared for diode lasers with different waveguide structures. The waveguide structures which were analyzed in this research were a basic GaN waveguide structure, an InGaN waveguide structure, and AlInGaN waveguide structure. In addition the effects of Indium concentration and the thickness of the top and down waveguide layers have been studied. The InGaN waveguide layer, which has a higher concentration of Indium, appears to increase the OCF. The increased thickness of the GaN layer improves light emission. However, laser performance deteriorates with increasing thickness of waveguide layers more than 100 nm. Over all, LD with AlInGaN waveguide structure has highest OCF, slope efficiency and DQE.