Fabrication of InN based photodetector using porous silicon buffer layer
Author:
Publisher
Informa UK Limited
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Link
http://www.tandfonline.com/doi/pdf/10.1179/1743294413Y.0000000189
Reference25 articles.
1. InN, latest development and a review of the band-gap controversy
2. InN p-i-n Nanowire Solar Cells on Si
3. InN PHOTOCONDUCTORS ON DIFFERENT ORIENTATIONS OF Si SUBSTRATES
4. Optical and electrical properties of InN grown by radio-frequency reactive sputtering
5. Growth temperature dependences of InN films grown by MOCVD
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3. Fabrication and characterization of InN-based metal-semiconductor-metal infrared photodetectors prepared using sol–gel spin coated technique;Functional Materials Letters;2021-05-27
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