THE INFLUENCE OF HIGH-ENERGY ELECTRONS IRRADIATION ON SURFACE OF n-GaP AND ON Au/n-GaP/Al SCHOTTKY BARRIER DIODE

Abstract

We fabricated 25 Au/[Formula: see text]-GaP/Al Schottky devices and investigated the influence of high electron irradiation, which has 12[Formula: see text]MeV on the devices, at room temperature. The X-ray diffraction patterns, scanning electron microscopic images and Raman spectra of a gallium phosphide (GaP) semiconductor before and after electron irradiation have been analyzed. Furthermore, some electrical measurements of the devices were carried out through the current–voltage ([Formula: see text]–[Formula: see text]) and capacitance–voltage ([Formula: see text]–[Formula: see text]) measurements. From the [Formula: see text]–[Formula: see text] characteristics, experimental ideality factor [Formula: see text] and barrier height [Formula: see text] values of these Schottky diodes have been determined before and after irradiation, respectively. The results have also been analyzed statically, and a gauss distribution has been obtained. The built-in potential [Formula: see text], barrier height [Formula: see text], Fermi level [Formula: see text] and donor concentration [Formula: see text] values have been determined from the reverse bias [Formula: see text]–[Formula: see text] and [Formula: see text] curves of Au/[Formula: see text]-GaP/Al Schottky barrier diodes at 100[Formula: see text]kHz before and after 12[Formula: see text]MeV electron irradiation. Furthermore, we obtained the series resistance values of Au/[Formula: see text]-GaP/Al Schottky barrier diodes with the help of different methods. Experimental results confirmed that the electrical characterization of the device changed with the electron irradiation.