GROWTH OF SiC NANOSTRUCTURES ON Si (100) USING LOW ENERGY CARBON ION IMPLANTATION AND ELECTRON BEAM RAPID THERMAL ANNEALING-Reference-Cited by-同舟云学术

GROWTH OF SiC NANOSTRUCTURES ON Si (100) USING LOW ENERGY CARBON ION IMPLANTATION AND ELECTRON BEAM RAPID THERMAL ANNEALING

Published:2004-08 Issue:04n05 Volume:03 Page:425-430
ISSN:0219-581X
Container-title:International Journal of Nanoscience
language:en
Short-container-title:Int. J. Nanosci.

Author:

MARKWITZ A.¹²,JOHNSON S.¹²,RUDOLPHI M.³,BAUMANN H.³

Affiliation:

1. Rafter Research Laboratory, Institute of Geological and Nuclear Sciences, P. O. Box 31-312, Lower Hutt, New Zealand

2. MacDiarmid Institute for Advanced Materials and Nanotechnology, Victoria University of Wellington, New Zealand

3. Institute for Nuclear Physics, Johann Wolfgang Goethe University, August-Eulerstr. 6, 60486 Frankfurt, Germany

Abstract

A combination of 10 keV 13 C low energy ion implantation and electron beam rapid thermal annealing (EB-RTA) is used to fabricate silicon carbide nanostructures on (100) silicon surfaces. These large ellipsoidal features appear after EB-RTA at 1000°C for 15 s. Prior to annealing, the silicon surfaces are virgin-like flat. Atomic force microscopy was used to study the morphology of these structures and it was found that the diameter and number of nanoboulders are linearly dependent on the implantation fluence. Further, a linear relationship between nanoboulder diameter and spacing suggests crystal coarsening is a fundamental element in the growth mechanism.

Publisher

World Scientific Pub Co Pte Lt

Subject

Electrical and Electronic Engineering,Computer Science Applications,Condensed Matter Physics,General Materials Science,Bioengineering,Biotechnology

Link

https://www.worldscientific.com/doi/pdf/10.1142/S0219581X04002218

Reference16 articles.

1. Photoluminescence of size-separated silicon nanocrystals: Confirmation of quantum confinement

2. Precipitation, ripening and chemical effects during annealing of Ge+ implanted SiO2 layers

3. The formation of narrow nanocluster bands in Ge-implanted SiO2-layers

4. Microstructural investigation of Sn nanoclusters in double-energy implanted and annealed SiO2 layers with cross-sectional TEM

5. Growth of Si nanocrystals on alumina and integration in memory devices

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Diffusion of Pb in carbon ion-implanted silicon: Discovery of a new crystalline phase after electron beam annealing;Vacuum;2008-06

2. Deuteron microprobe analysis of carbon in the transition region between SiC and Si nanostructures grown on Si;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2007-07

3. X-ray diffraction study of low-energy carbon-ion implanted Si(001);Surface and Interface Analysis;2007

4. A nuclear reaction analysis and optical microscopy study on controlled growth of large SiC nanocrystals on Si formed by low-energy ion implantation and electron beam annealing;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2006-08

5. Formation of large SiC nanocrystals on Si(100) by 12C implantation and electron beam annealing;Current Applied Physics;2006-06