Microstructural investigation of Sn nanoclusters in double-energy implanted and annealed SiO2 layers with cross-sectional TEM
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference13 articles.
1. Electroluminescence Device Perspectives of Si+-Implanted SiO2
2. Strong blue and violet photoluminescence and electroluminescence from germanium-implanted and silicon-implanted silicon-dioxide layers
3. 2.7-eV luminescence in as-manufactured high-purity silica glass
4. Isoelectronic series of twofold coordinated Si, Ge, and Sn atoms in glassy SiO2: a luminescence study
5. Multimodal impurity redistribution and nanocluster formation in Ge implanted silicon dioxide films
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1. Structural and gas sensing properties of ex-situ oxidized Sn grown by thermal evaporation;Applied Surface Science;2016-01
2. Diffusion of Pb in (100) Si under electron beam annealing following dual ion implantations of Pb/Ne, Pb/O and Pb/N;Vacuum;2010-04
3. Rare-Earth Implanted MOS Devices for Silicon Photonics;Springer Series in Materials Science;2010
4. Er+ implantation in SnO2:SiO2 layers: Structure changes and light emission;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2009-05
5. Effect of Oxidation Temperature on the Photoluminescence of Sn Implanted and Annealed SiO2/Si;Advanced Science Letters;2009-03-01
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