Recent developments of film bulk acoustic resonators

Author:

Gao Junning123,Liu Guorong12,Li Jie12,Li Guoqiang123

Affiliation:

1. China State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510641, P. R. China

2. Engineering Research Center on Solid-State, Lighting and its Informationisation of Guangdong Province, Guangzhou 510641, P. R. China

3. Department of Electronic Materials, School of Electronic Materials and Engineering, South China University of Technology, Guangzhou 510641, P. R. China

Abstract

Film bulk acoustic wave resonator (FBAR) experienced skyrocketing development in the past 15 years, owing to the explosive development of mobile communication. It stands out in acoustic filters mainly because of high quality factor, which enables low insertion loss and sharp roll off. Except for the massive application in wireless communication, FBARs are also promising sensors because of the high sensitivity and readily integration ability to miniaturize circuits. On the ground of summarizing FBAR’s application in wireless communication as filters and in sensors including electronic nose, bio field, and pressure sensing, this paper review the main challenges of each application faced. The number of filters installed in the mobile phone has being grown explosively, which leads to overcrowded bands and put harsh requirements on component size and power consumption control for each unit. Data flow and rate are becoming increasingly demanding as well. This paper discusses three promising technical strategies addressing these issues. Among which coupled resonator filter is given intense attention because it is able to vigorously reduce the filter size by stacking two or more resonators together, and it is a great technique to increase data flow and rate. Temperature compensation methods are discussed considering their vital influence on frequency stability. Finally, materials improvement and novel materials exploration for band width modulation, tunable band acquisition, and quality factor improvement are discussed. The authors appeal attention of the academic society to bring AlN epitaxial thin film into the FBAR fabrication and have proposed a configuration to implement this idea.

Publisher

World Scientific Pub Co Pte Lt

Subject

General Materials Science

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