OPTICAL PROPERTIES AND CARRIER DYNAMICS IN ASYMMETRIC COUPLED InGaN MULTIPLE QUANTUM WELLS-Reference-Cited by-同舟云学术

OPTICAL PROPERTIES AND CARRIER DYNAMICS IN ASYMMETRIC COUPLED InGaN MULTIPLE QUANTUM WELLS

Published:2013-04 Issue:02 Volume:06 Page:1350021
ISSN:1793-6047
Container-title:Functional Materials Letters
language:en
Short-container-title:Funct. Mater. Lett.

Author:

WENG GUO-EN¹²,ZHANG BAO-PING¹²,LIANG MING-MING¹²,LV XUE-QIN²,ZHANG JIANG-YONG¹,YING LEI-YING¹,QIU ZHI REN³,YAGUCHI H.⁴,KUBOYA S.⁵,ONABE K.⁵,CHEN SHAO-QIANG⁶,AKIYAMA H.⁶

Affiliation:

1. Department of Physics and Semiconductor Photonics Research Center, Xiamen University, Xiamen 361005, P. R. China

2. Pen-Tung Sah Institute of Micro-Nano Science and Technology, Xiamen University, Xiamen 361005, P. R. China

3. State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-Sen University, Guangzhou 510275, P. R. China

4. Division of Mathematics, Electronics and Informatics, Graduate School of Science and Engineering, Saitama University, Saitama 338-8570, Japan

5. Department of Advanced Materials Science, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8561, Japan

6. Institute for Solid State Physics, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8581, Japan

Abstract

Optical properties and carrier dynamics of InGaN/GaN asymmetric coupled quantum wells (ACQWs) are studied by excitation-power-dependent photoluminescence (PL), photoreflectance (PR) and time-resolved PL (TRPL) experiments. Under weak excitations, only the emission from the widest well is observed due to the tunneling from narrower to wider wells. Under strong excitations, the carrier distribution becomes more uniform and an enhanced emission from the mid well (2.5 nm well) is observed. Dependence of the PL intensity on excitation power is well explained by a rate equation model. The energy levels in the ACQW structure are clearly revealed by PR measurements and are in good agreement with calculations. Our results indicate that the enhanced emission from the mid well is ascribed to "reverse tunneling" from 3.0 to 2.5 nm well, which is confirmed by TRPL experiments.

Publisher

World Scientific Pub Co Pte Lt

Subject

General Materials Science

Link

https://www.worldscientific.com/doi/pdf/10.1142/S1793604713500215

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