Carrier dynamics of AlGaAs/AlAs asymmetric double quantum wells with different barrier thickness

Author:

Liu Yuejun1,Weng Guoen1ORCID,Cao Fuyi1,Wang Youyang1,Wan Wenjian2,Wang Chang2ORCID,Nakamae Hidekazu3,Kim Changsu3,Hu Xiaobo1,Luo Xianjia1,Luo Shuai4,Chen Shaoqiang13ORCID,Chu Junhao1,Akiyama Hidefumi3

Affiliation:

1. East China Normal University

2. Chinese Academy of Sciences

3. The University of Tokyo

4. Jiangsu Huaxing Laser Technology Co., Ltd.

Abstract

Optical properties and carrier dynamics of AlGaAs/AlAs asymmetric double quantum wells (ADQWs) with varied barrier thickness are studied by excitation-power-dependent photoluminescence (PL) and temperature-dependent time-resolved PL (TRPL) experiments. The origin of the transition energies derived from the time-integrated spectra is confirmed by theoretical calculation using the Schrödinger equation. The carrier kinetics and the temporal behavior of the emission in the narrow well (NW) and wide well (WW) are physically revealed with varying barrier thicknesses by the TRPL measurements. For a better understanding of the carrier transport mechanism, the electron tunneling times for the ADQWs are theoretically estimated based on a rate-equation model. The calculation indicates that the electron tunneling time decreases with increasing temperature, which may be induced by enhanced phonon-assisted scattering.

Funder

National Natural Science Foundation of China

Japan Society for the Promotion of Science

Science and Technology Commission of Shanghai Municipal

Publisher

Optica Publishing Group

Subject

Electronic, Optical and Magnetic Materials

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