Compute-in-Memory SRAM Cell Using Multistate Spatial Wavefunction Switched (SWS)-Quantum Dot Channel (QDC) FET

Author:

Gudlavalleti Raja Hari1,Heller Evan2,Chandy John1,Jain Faquir1

Affiliation:

1. University of Connecticut, CT, USA

2. Synopysis Inc., Ossining, NY, USA

Abstract

This paper presents multistate spatial wavefunction switched (SWS)-quantum dot channel (QDC) field-effect transistor (FET) static random access memory (SRAM)-based Compute-in-Memory (CIM) cell. The SWS-QDC FETs have two or more vertically stacked coupled quantum dot channels, and the spatial location of carriers within these channels is governed by the applied gate voltage. The location of the carriers can be utilized to encode multiple logic levels within a single device. The utilization of SWS-QDC FETs in CIM cell increases the data storage and energy-efficient computation in the memory. CIM reduces the data access time and improves performance for energy-efficient artificial intelligence (AI) edge devices.

Publisher

World Scientific Pub Co Pte Ltd

Subject

Electrical and Electronic Engineering,Hardware and Architecture,Electronic, Optical and Magnetic Materials

Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. In-Memory Computing Using Dot-Product via Multi-Bit QD-NVRAMs;International Journal of High Speed Electronics and Systems;2024-07-25

2. Novel Multi-State QDC-QDG FETs and Gate All Around (GAA) FETs for Integrated Logic and QD-NVRAMs;International Journal of High Speed Electronics and Systems;2023-07-20

3. Enhancing Number of Bits Via Mini-Energy Band Transitions Using Si Quantum Dot Channel (QDC) and Ge Quantum Dot Gate (QDG) FETs and NVRAMs;International Journal of High Speed Electronics and Systems;2023-07-20

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