Compute-in-Memory SRAM Cell Using Multistate Spatial Wavefunction Switched (SWS)-Quantum Dot Channel (QDC) FET
Author:
Affiliation:
1. University of Connecticut, CT, USA
2. Synopysis Inc., Ossining, NY, USA
Abstract
Publisher
World Scientific Pub Co Pte Ltd
Subject
Electrical and Electronic Engineering,Hardware and Architecture,Electronic, Optical and Magnetic Materials
Link
https://www.worldscientific.com/doi/pdf/10.1142/S012915642350012X
Reference9 articles.
1. A Logic-in-Memory Computer
2. Challenges and Trends of SRAM-Based Computing-In-Memory for AI Edge Devices
3. 8T SRAM Cell as a Multibit Dot-Product Engine for Beyond Von Neumann Computing
4. An SRAM-Based Multibit In-Memory Matrix-Vector Multiplier With a Precision That Scales Linearly in Area, Time, and Power
5. Quantum Dot Channel FETs Harnessing Mini-Energy Band Transitions in GeOx-Ge and Si QDSL for Multi-Bit Computing
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. In-Memory Computing Using Dot-Product via Multi-Bit QD-NVRAMs;International Journal of High Speed Electronics and Systems;2024-07-25
2. Novel Multi-State QDC-QDG FETs and Gate All Around (GAA) FETs for Integrated Logic and QD-NVRAMs;International Journal of High Speed Electronics and Systems;2023-07-20
3. Enhancing Number of Bits Via Mini-Energy Band Transitions Using Si Quantum Dot Channel (QDC) and Ge Quantum Dot Gate (QDG) FETs and NVRAMs;International Journal of High Speed Electronics and Systems;2023-07-20
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