Quantum Dot Channel FETs Harnessing Mini-Energy Band Transitions in GeO<sub>x</sub>-Ge and Si QDSL for Multi-Bit Computing-Reference-Cited by-同舟云学术

Quantum Dot Channel FETs Harnessing Mini-Energy Band Transitions in GeO_x-Ge and Si QDSL for Multi-Bit Computing

Published:2022-03 Issue:01n04 Volume:31 Page:
ISSN:0129-1564
Container-title:International Journal of High Speed Electronics and Systems
language:en
Short-container-title:Int. J. Hi. Spe. Ele. Syst.

Author:

Jain F.¹,Gudlavalleti R.¹,Mays R.¹,Saman B.¹²,Chan P-Y.¹,Chandy J.¹,Lingalugari M.³,Heller E.⁴

Affiliation:

1. ECE, University of Connecticut, Storrs, CT 06269, USA

2. Taif University, CFMR+4Q3, Al Hawiyah, Taif 26571, Saudi Arabia

3. UConn Storrs, CT 06269, USA

4. Synopsys Inc., 400 Executive Blvd No. 101, Ossining, NY 10562, USA

Abstract

This paper presents multi-state quantum dot channel (QDC) FETs incorporating cladded quantum dots forming a novel superlattice (QDSL) as the transport channel. Harnessing QDSL mini-energy band transitions as well as the encoding of spatial location of carriers in the upper or lower quantum dot channels is utilized to obtain 8- and 16-logic states. Potentially, 32-logic states can be achieved by additionally incorporating QDSL between tunnel oxide and gate. This maybe an interim alternative to sub-milliKelvin Si/SiGe qubits.

Publisher

World Scientific Pub Co Pte Ltd

Subject

Electrical and Electronic Engineering,Hardware and Architecture,Electronic, Optical and Magnetic Materials

Link

https://www.worldscientific.com/doi/pdf/10.1142/S0129156422400122

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Fabrication of Multi-Bit SRAMs Using Quantum Dot Channel (QDC)-Quantum Dot Gate (QDG) FET;International Journal of High Speed Electronics and Systems;2023-07-20

2. Compute-in-Memory SRAM Cell Using Multistate Spatial Wavefunction Switched (SWS)-Quantum Dot Channel (QDC) FET;International Journal of High Speed Electronics and Systems;2023-07-20

3. Design and Simulation of Multi-State D-Latch Circuit Using QDC-SWS FETs;International Journal of High Speed Electronics and Systems;2023-07-13