PRESENT AND FUTURE OF HIGH-SPEED COMPOUND SEMICONDUCTOR IC's-Reference-Cited by-同舟云学术

PRESENT AND FUTURE OF HIGH-SPEED COMPOUND SEMICONDUCTOR IC's

Published:2003-03 Issue:01 Volume:13 Page:1-25
ISSN:0129-1564
Container-title:International Journal of High Speed Electronics and Systems
language:en
Short-container-title:Int. J. Hi. Spe. Ele. Syst.

Author:

OTSUJI TAIICHI¹

Affiliation:

1. Center for Microelectronic Systems, Faculty of Computer Science and Systems Engineering, Kyushu Institute of Technology, 680-4 Kawazu, lizuka, Fukuoka, 820-8502, Japan

Abstract

This paper describes state-of-the-art of high-speed electronic device and IC technologies for very high-speed lightwave communications systems. The technology of interest is for over 40-Gbit/s transmitter and receiver operations. Device technology including Si-Ge, GaAs-based, and InP-based heterostructure transistors as well as circuit design technology including analog/digital/mixed-signal and optoelectronic IC's are reviewed. The speed limiting factors are discussed to address the future trends toward 100 Gbit/s and beyond.

Publisher

World Scientific Pub Co Pte Lt

Subject

Electrical and Electronic Engineering,Hardware and Architecture,Electronic, Optical and Magnetic Materials

Link

https://www.worldscientific.com/doi/pdf/10.1142/S0129156403001508

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