Modulation Effects of Photocarriers on the Terahertz Plasma-Wave Resonance in High-Electron-Mobility Transistors under Interband Photoexcitation-Reference-Cited by-同舟云学术

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Modulation Effects of Photocarriers on the Terahertz Plasma-Wave Resonance in High-Electron-Mobility Transistors under Interband Photoexcitation

Published:2005-06-10 Issue:6A Volume:44 Page:3842-3847
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Hanabe Mitsuhiro,Otsuji Taiichi,Ishibashi Takuma,Uno Tomohiro,Ryzhii Victor

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 26 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Extended design window of resonant plasma-wave transistor for terahertz emitter by considering degenerate carrier velocity model with Fermi–Dirac distribution;Japanese Journal of Applied Physics;2015-05-07

2. Physical Analysis and Design of Resonant Plasma-Wave Transistors for Terahertz Emitters;IEEE Transactions on Terahertz Science and Technology;2015-03

3. Room-temperature terahertz mixer based on the simultaneous electronic and optical excitations of plasma waves in a field effect transistor;Applied Physics Letters;2010-01-04

4. Enhancement of terahertz radiation by CW infrared laser excitation in a doubly interdigitated grating gates transistors;Journal of Physics: Conference Series;2009-11-01

5. Efficiency enhancement of emission of terahertz radiation by optical excitation from dual grating gate HEMT;Journal of Nanophotonics;2009-10-01

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