ON THE 1/f NOISE IN 0.15 μm FULLY DEPLETED SOI/MOS TRANSISTORS

Abstract

The low frequency noise (LFN) behavior in 0.15 μm N-channel fully depleted SOI/MOS transistors is investigated, both in ohmic and saturation regimes. The extraction of the interface trap density is also carried out. Moreover, the existence of a moderate kink effect and its influence on LF noise in fully depleted devices are shown.