A Linearity Improved 10-bit 120-MS/s 1.5 mW SAR ADC with High-Speed and Low-Noise Dynamic Comparator Technique

Author:

Xu Daiguo12ORCID,Jiang Hequan2,Fu Dongbin2,Yu Xiaoquan2,Xu Shiliu1,Yuan Jun2,Hu Rongbin2,Zhu Can2,Wang Jianan2

Affiliation:

1. School of Microelectronics and Solid-State Electronics, University of Electronic Science and Technology of China, Chengdu 611731, P. R. China

2. Science and Technology on Analog Integrated Circuit Laboratory, Chongqing 400060, P. R. China

Abstract

This paper presents a linearity improved 10-bit 120-MS/s successive approximation register (SAR) analog-to-digital converter (ADC) with high-speed and low-noise dynamic comparator. A gate cross-coupled technique is introduced in boost sampling switch, the clock feedthrough effect is compensated without extra auxiliary switch and the linearity of sampling switch is enhanced. Further, substrate voltage boost technique is proposed, the absolute values of threshold voltage and equivalent impedances of MOSFETs are both depressed. Consequently, the delay of comparator is also reduced. Moreover, the reduction of threshold voltages for input MOSFETs could bring higher transconductance and lower equivalent input noise. To demonstrate the proposed techniques, a design of SAR ADC is fabricated in 65-nm CMOS technology, consuming 1.5[Formula: see text]mW from 1[Formula: see text]V power supply with a SNDR [Formula: see text][Formula: see text]dB and SFDR [Formula: see text][Formula: see text]dB. The proposed ADC core occupies an active area of 0.021[Formula: see text]mm2, and the corresponding FoM is 24.4 fJ/conversion-step with Nyquist frequency.

Publisher

World Scientific Pub Co Pte Lt

Subject

Electrical and Electronic Engineering,Hardware and Architecture,Electrical and Electronic Engineering,Hardware and Architecture

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