Active waveguides by low-fluence carbon implantation in Nd3+-doped fluorophosphate glasses

Author:

Liu Chun-Xiao1,Luo Zhe-Yuan1,Li Yu-Wen1,Chen Meng1,Xu Jun2,Fu Li-Li3,Yu Ke-Han1,Zheng Rui-Lin1,Zhou Zhi-Guang4,Li Wei-Nan4,Guo Hai-Tao4,Lin She-Bao5,Wei Wei1

Affiliation:

1. School of Optoelectronic Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China

2. School of Information Engineering, East China Jiaotong University, Nanchang 330013, China

3. College of Electronic Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China

4. State Key Laboratory of Transient Optics and Photonics, Xi’an Institute of Optics and Precision Mechanics, Chinese Academy of Sciences (CAS), Xi’an 710119, China

5. Institute of Physics and Optoelectronics Technology, Baoji University of Arts & Sciences, Baoji 721007, China

Abstract

A planar waveguide in the Nd[Formula: see text]-doped fluorophosphate glass is fabricated by a 6.0 MeV C[Formula: see text] ion implantation at a low-fluence of [Formula: see text] ions/cm2. The fluence is close to that in semiconductor industry. The dark mode spectra are recorded by a model 2010 prism coupler. The energy losses during the implantation process and the refractive index profile of the waveguide are simulated by the SRIM 2010 code and the reflectivity calculation method (RCM), respectively. The near-field light intensity profile and the propagation loss of the waveguide are measured by an end-face coupling system. The two-dimensional (2D) modal profile of transverse electric (TE) mode for the fabricated waveguide is calculated by the finite difference beam propagation method (FD-BPM). The results of microluminescence and optical absorption reveal that the spectroscopic characteristics of the Nd[Formula: see text]-doped fluorophosphate glass are nearly unaffected by the carbon ion implantation process. This work suggests that the carbon-implanted Nd[Formula: see text]-doped fluorophosphate glass waveguide is a promising candidate for integrated active devices.

Publisher

World Scientific Pub Co Pte Lt

Subject

Condensed Matter Physics,Statistical and Nonlinear Physics

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