BURIED PLANAR WAVEGUIDE IN KTiOPO4 FORMED BY Cs+ ION EXCHANGE AND Si+ ION IMPLANTATION

Abstract

Buried planar waveguide was produced by Cs +– K + ion exchange and Si + ion implantation in z-cut KTiOPO 4 (KTP) single domain crystals. The dark mode spectra of the waveguide were obtained by the prism-coupling method. The refractive index profiles of the Cs +– K + ion exchanged sample were reconstructed using the inverse Wenzel–Kramers–Brillouin (iWKB) method and the analysis of the refractive index profile has shown an exponential distribution in the exchange layer. The Si + ions implanted into the Cs +– K + exchange sample with the energy of 550 keV at a dose of 1.0×1015 ions/cm2 at room temperature to form a buried planar waveguide structure. The program code TRIM'98 (transport of ions in matter) is used to simulate the implantation process. The near field patterns of propagation light in buried waveguide was studied by the end-coupling method.