LOW-FIELD ELECTRON TRANSPORT PROPERTIES IN ZINCBLENDE AND WURTZITE GaN STRUCTURES USING AN ITERATION MODEL FOR SOLVING BOLTZMANN EQUATION

Abstract

An iteration calculation has been carried out to study electron transport properties in zincblende and wurtzite GaN materials. The two-mode nature of the polar optic phonons is considered jointly with deformation potential acoustic, piezoelectric, ionized impurity scattering. Band non-parabolicity, admixture of p functions, arbitrary degeneracy of the electron distribution, and the screening effects of free carriers on the scattering probabilities are incorporated. Electron drift mobility in both zincblende and wurtzite GaN crystal structures are calculated for different temperature and doping dependencies. It is found that the electron mobility decreases monotonically as the temperature increases from 100 K to 600 K. The low temperature value of electron mobilty increases significantly with increasing doping concentration. The agreement of iterative results with the available experimental data is found to be satisfactory.