A comprehensive model and numerical analysis of electron mobility in GaN-based high electron mobility transistors
Author:
Affiliation:
1. Micro and Nano Electronics Laboratory, Faculty of Electrical Engineering and Computing, University of Zagreb, 10000 Zagreb, Croatia
Funder
Hrvatska Zaklada za Znanost
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
https://aip.scitation.org/doi/pdf/10.1063/5.0037228
Reference27 articles.
1. LOW-FIELD ELECTRON TRANSPORT PROPERTIES IN ZINCBLENDE AND WURTZITE GaN STRUCTURES USING AN ITERATION MODEL FOR SOLVING BOLTZMANN EQUATION
2. Self-Consistent Subband Calculations of AlGaN/GaN Single Heterojunctions
3. Measurement of drift mobility in AlGaN/GaN heterostructure field-effect transistor
4. Mobility of electrons in bulk GaN andAlxGa1−xN/GaNheterostructures
5. Two-dimensional electron mobility limitation mechanisms inAlxGa1−xN∕GaNheterostructures
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