Enhanced photosensitivity of highly spectrum selective cylindrical gate In1−xGaxAs nanowire MOSFET photodetector

Abstract

In this study, an [Formula: see text] nanowire metal oxide semiconductor field effect transistor (MOSFET) photosensor with zinc oxide (metallic ZnO), which act as a transparent optical window over channel has been investigated. The electrical characterization of [Formula: see text] nanowire MOSFET was compared to their silicon counterpart. [Formula: see text] nanowire MOSFET responds to visible-near infrared (600 nm to 1.7 nm) under light illumination as opposite to silicon nanowire MOSFET, which respond to ultraviolet to visible spectra (Peak @ 400 nm). ZnO–[Formula: see text]–InGaAs device is characterized by responsivity [Formula: see text] of [Formula: see text], photoconductive gain of [Formula: see text]%, with reasonable available photocurrent of [Formula: see text] and sensitivity [Formula: see text] of [Formula: see text]. The present work demonstrates the potential for high performance visible to near-infrared [Formula: see text] detectors with tunable band gaps for applications like interactive display, indoor communication and optical sensors.