High compositional homogeneity in In-rich InGaAs nanowire arrays on nanoimprinted SiO2/Si (111)-Reference-Cited by-同舟云学术

High compositional homogeneity in In-rich InGaAs nanowire arrays on nanoimprinted SiO2/Si (111)

Published:2012-07-23 Issue:4 Volume:101 Page:043116
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Hertenberger S.,Funk S.,Vizbaras K.,Yadav A.,Rudolph D.,Becker J.,Bolte S.,Döblinger M.,Bichler M.,Scarpa G.,Lugli P.,Zardo I.,Finley J. J.,Amann M.-C.,Abstreiter G.,Koblmüller G.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4738769

Reference20 articles.

1. Electrical Characterizations of InGaAs Nanowire-Top-Gate Field-Effect Transistors by Selective-Area Metal Organic Vapor Phase Epitaxy

2. Scaling of Nanowire Transistors

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5. Critical diameter for III-V nanowires grown on lattice-mismatched substrates

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