RECENT PROGRESS OF PERPENDICULAR ANISOTROPY MAGNETIC TUNNEL JUNCTIONS FOR NONVOLATILE VLSI-Reference-Cited by-同舟云学术

RECENT PROGRESS OF PERPENDICULAR ANISOTROPY MAGNETIC TUNNEL JUNCTIONS FOR NONVOLATILE VLSI

Published:2012-09 Issue:03 Volume:02 Page:1240003
ISSN:2010-3247
Container-title:SPIN
language:en
Short-container-title:SPIN

Author:

IKEDA SHOJI¹²,SATO HIDEO¹,YAMANOUCHI MICHIHIKO¹²,GAN HUADONG¹,MIURA KATSUYA¹²³,MIZUNUMA KOTARO²,KANAI SHUN²,FUKAMI SHUNSUKE¹,MATSUKURA FUMIHIRO¹²⁴,KASAI NAOKI¹,OHNO HIDEO¹²⁴

Affiliation:

1. Center for Spintronics Integrated Systems,Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan

2. Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan

3. Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo 185-8601, Japan

4. WPI Advanced Institute for Materials Research, Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai 980-8577, Japan

Abstract

We review recent developments in magnetic tunnel junctions with perpendicular easy axis (p-MTJs) for nonvolatile very large scale integrated circuits (VLSIs). So far, a number of material systems such as rare-earth/transition metal alloys, L10-ordered ( Co, Fe )– Pt alloys, Co /( Pd, Pt ) multilayers, and ferromagnetic-alloy/oxide stacks have been proposed as electrodes in p-MTJs. Among them, p-MTJs with single or double ferromagnetic-alloy/oxide stacks, particularly CoFeB–MgO , were shown to have high potential to satisfy major requirements for integration.

Publisher

World Scientific Pub Co Pte Lt

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

https://www.worldscientific.com/doi/pdf/10.1142/S2010324712400036

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