GROWTH OF SiC NANOSTRUCTURES ON Si (100) USING LOW ENERGY CARBON ION IMPLANTATION AND ELECTRON BEAM RAPID THERMAL ANNEALING

Author:

MARKWITZ A.12,JOHNSON S.12,RUDOLPHI M.3,BAUMANN H.3

Affiliation:

1. Rafter Research Laboratory, Institute of Geological and Nuclear Sciences, P. O. Box 31-312, Lower Hutt, New Zealand

2. MacDiarmid Institute for Advanced Materials and Nanotechnology, Victoria University of Wellington, New Zealand

3. Institute for Nuclear Physics, Johann Wolfgang Goethe University, August-Eulerstr. 6, 60486 Frankfurt, Germany

Abstract

A combination of 10 keV 13 C low energy ion implantation and electron beam rapid thermal annealing (EB-RTA) is used to fabricate silicon carbide nanostructures on (100) silicon surfaces. These large ellipsoidal features appear after EB-RTA at 1000°C for 15 s. Prior to annealing, the silicon surfaces are virgin-like flat. Atomic force microscopy was used to study the morphology of these structures and it was found that the diameter and number of nanoboulders are linearly dependent on the implantation fluence. Further, a linear relationship between nanoboulder diameter and spacing suggests crystal coarsening is a fundamental element in the growth mechanism.

Publisher

World Scientific Pub Co Pte Lt

Subject

Electrical and Electronic Engineering,Computer Science Applications,Condensed Matter Physics,General Materials Science,Bioengineering,Biotechnology

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