FABRICATION OF GaN HOMO-JUNCTION ON Si (111) SUBSTRATE FOR SENSOR APPLICATIONS

Abstract

In this paper, we investigated growth of GaN pn-homo junction layers on silicon (111) by plasma-assisted molecular beam epitaxy (PA-MBE) system and its application for photo-sensors. Silicon (Si) and magnesium (Mg) were used in this study as n- and p-dopants, respectively. Structural and optical analysis of the GaN homo-junction samples were performed by using reflection high energy electron diffraction (RHEED), X-ray diffraction (XRD), Raman spectroscopy and photoluminescence (PL) to analyze the crystalline quality of the samples. Surprisingly, the Raman analysis has revealed that there is no quenching of the A1 (LO) peak, with the presence of Si - and Mg -dopants in sample. The pn-junctions sample has good optical quality as measured by the PL system. Electrical characterization of the photo-sensors was carried out by using current–voltage (I–V) measurements.