Affiliation:
1. Deep Sub-micron Integrated Circuit, Institute of Microelectronics, 11 Science Park Road, Singapore Science Park II, Singapore 117685, Singapore
2. School of Electrical & Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798, Singapore
Abstract
The properties of the ion-metal-plasma (IMP) deposited Ta, TaN and multistacked Ta/TaN between Cu and SiO 2 have been investigated in the Cu /barrier layer/ SiO 2/ Si structures using four-point probe, atomic force microscopy (AFM), X-ray diffraction (XRD), Rutherford back scattering (RBS), tunneling electron microscopy (TEM) and metal-pulse techniques. It was found that the multistacked Ta/TaN barrier shows the best metallurgical and thermal stability among three of them, and the superior stability is found to result mainly from the nanocrystalline microstructure rather than the density and grain size of the barrier materials. The microstructure, which contains nanocrystalline grain and amorphous-like matrix, can better retard the intermixing and diffusion of Cu, Ta, O and Si atoms, due likely to reduction of grain boundaries that are the main passway for the diffusion of these elements.
Publisher
World Scientific Pub Co Pte Lt
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Cited by
14 articles.
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