Discrete Study of ALD TaN on Via and Line for Low Resistive and High Reliable Cu/Low-k Interconnects and Other Applications

Author:

Motoyama K.,Fujii K.

Publisher

The Electrochemical Society

Subject

Electronic, Optical and Magnetic Materials

Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Extreamly Advanced Cu Interconnect with Selective ALD Barrier for High Performance Logic Device;2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM);2023-05

2. Galvanic Corrosion Effect of Co Liner on ALD TaN Barrier;2022 IEEE International Interconnect Technology Conference (IITC);2022-06-27

3. Stoichiometry tuning of TaN films through ion treatment: Molecular dynamics study;Journal of Vacuum Science & Technology A;2021-12

4. CMP Development for Ru Liner Structures beyond 14nm;ECS Journal of Solid State Science and Technology;2018

5. Barrier properties of ultrathin VN films of low resistivity and high density for Cu interconnects;Japanese Journal of Applied Physics;2016-01-05

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