MAGNETOSPECTROSCOPY OF Zn-DOPED InP TO 30 T-Reference-Cited by-同舟云学术

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MAGNETOSPECTROSCOPY OF Zn-DOPED InP TO 30 T

Published:2004-11-30 Issue:27n29 Volume:18 Page:3839-3842
ISSN:0217-9792
Container-title:International Journal of Modern Physics B
language:en
Short-container-title:Int. J. Mod. Phys. B

Author:

LEWIS R. A.¹,WANG Y.-J.²

Affiliation:

1. Institute for Superconducting and Electronic Materials, University of Wollongong, Wollongong NSW 2522, Australia

2. National High Magnetic Field Laboratory at Florida State University, 1800 Paul Dirac Drive, Tallahassee, Florida 32310, USA

Abstract

Zn -doped p-type InP has been examined by far-infrared absorption magnetospectroscopy to fields much higher than previously. The impurity-related transitions observed confirm and greatly extend previous data and reveal new phenomena.

Publisher

World Scientific Pub Co Pte Lt

Subject

Condensed Matter Physics,Statistical and Nonlinear Physics

Link

https://www.worldscientific.com/doi/pdf/10.1142/S0217979204027566

Reference7 articles.

1. Spherical Model of Shallow Acceptor States in Semiconductors

2. Cubic contributions to the spherical model of shallow acceptor states

3. Binding energy of shallow acceptors in group IV elements and III–V compounds

4. Calculations of acceptor ionization energies in GaN

5. Electronic Raman spectra of shallow acceptors in p-type InP

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