Calculations of acceptor ionization energies in GaN
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.63.125212/fulltext
Reference38 articles.
1. III–nitrides: Growth, characterization, and properties
2. GaN: Processing, defects, and devices
3. III–V Nitride semiconductors for high-performance blue and green light-emitting devices
4. Activation of acceptors in Mg‐doped GaN grown by metalorganic chemical vapor deposition
5. Doping of group III nitrides
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