Electronic Raman spectra of shallow acceptors in p-type InP-Reference-Cited by-同舟云学术

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Electronic Raman spectra of shallow acceptors in p-type InP

Published:1997-11 Issue:6 Volume:104 Page:371-374
ISSN:0038-1098
Container-title:Solid State Communications
language:en
Short-container-title:Solid State Communications

Author:

Wenzel M.,Irmer G.,Monecke J.

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,General Chemistry

Reference19 articles.

1. Proceedings of the 9th International Conference on the Physics of Semiconductors;Wright,1968

2. Electronic Raman spectra of shallow acceptors in semi-insulating GaAs

3. Residual acceptor assessment in as‐grown bulk GaAs by Raman and selective pair luminescence spectroscopy: A comparative study

4. Raman spectroscopic study of residual acceptors in semi‐insulating bulk GaAs

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1. EM Acceptor Spectra;Optical Absorption of Impurities and Defects in SemiconductingCrystals;2009

2. Magneto-optical far-infrared absorption spectroscopy of the hole states of indium phosphide;Physical Review B;2005-03-29

3. MAGNETOSPECTROSCOPY OF Zn-DOPED InP TO 30 T;International Journal of Modern Physics B;2004-11-30

4. Zeeman spectroscopy of the Zn acceptor in InP;Solid State Communications;2003-05

5. Far-infrared spectroscopy of the zinc acceptor in indium phosphide;Physica B: Condensed Matter;2001-01

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