Enhanced Gain Low-Power CMOS Amplifiers: A Novel Design Approach Using Bulk-Driven Load and Introduction to GACOBA Technique

Abstract

A new design technique is proposed and discussed for the design of active load using the bulk-driven method. The proposed method uses gate-driven input drivers with bulk-driven MOS load. Further, it is used to design single stage amplifiers, such as common source (CS) and common gate (CG). In addition to the proposed technique, a very efficient method is implemented to improve and control the gain of the amplifiers, which is named as Gain Control by Bulk Amplification (GACOBA) Technique. The large signal, small signal and frequency domain analysis of proposed designs are done and to verify the outcomes it is simulated in SPECTER at 0.7[Formula: see text]V supply with 45[Formula: see text]nm CMOS technology. The result shows that the transconductance and gain of proposed single stage CS amplifier are increased without affecting impedance seen by output node. On the other hand, GACOBA technique is useful for gain enhancement in CS and CG amplifier.