Layer-by-layer epitaxy of multi-layer MoS2 wafers

Author:

Wang Qinqin12,Tang Jian12,Li Xiaomei12,Tian Jinpeng12,Liang Jing3,Li Na14,Ji Depeng4,Xian Lede4,Guo Yutuo12,Li Lu12,Zhang Qinghua12,Chu Yanbang12,Wei Zheng12,Zhao Yanchong12,Du Luojun1,Yu Hua14,Bai Xuedong12,Gu Lin12,Liu Kaihui3,Yang Wei12,Yang Rong124,Shi Dongxia12,Zhang Guangyu124

Affiliation:

1. Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences , Beijing 100190 , China

2. School of Physical Sciences, University of Chinese Academy of Sciences , Beijing 100190 , China

3. Collaborative Innovation Center of Quantum Matter and School of Physics, Peking University , Beijing 100871 , China

4. Songshan Lake Materials Laboratory , Dongguan 523808 , China

Abstract

Abstract The 2D semiconductor of MoS2 has great potential for advanced electronics technologies beyond silicon. So far, high-quality monolayer MoS2 wafers have been available and various demonstrations from individual transistors to integrated circuits have also been shown. In addition to the monolayer, multilayers have narrower band gaps but improved carrier mobilities and current capacities over the monolayer. However, achieving high-quality multi-layer MoS2 wafers remains a challenge. Here we report the growth of high-quality multi-layer MoS2 4-inch wafers via the layer-by-layer epitaxy process. The epitaxy leads to well-defined stacking orders between adjacent epitaxial layers and offers a delicate control of layer numbers up to six. Systematic evaluations on the atomic structures and electronic properties were carried out for achieved wafers with different layer numbers. Significant improvements in device performances were found in thicker-layer field-effect transistors (FETs), as expected. For example, the average field-effect mobility (μFE) at room temperature (RT) can increase from ∼80 cm2·V–1·s–1 for monolayers to ∼110/145 cm2·V–1·s–1 for bilayer/trilayer devices. The highest RT μFE of 234.7 cm2·V–1·s–1 and record-high on-current densities of 1.70 mA·μm–1 at Vds = 2 V were also achieved in trilayer MoS2 FETs with a high on/off ratio of >107. Our work hence moves a step closer to practical applications of 2D MoS2 in electronics.

Funder

National Key Research and Development Program of China

Chinese Academy of Sciences

Key Research and Development Program of Shandong Province

National Natural Science Foundation of China

Publisher

Oxford University Press (OUP)

Subject

Multidisciplinary

Reference49 articles.

1. Two-dimensional atomic crystals;Novoselov;Proc Natl Acad Sci USA,2005

2. Atomically thin MoS2: a new direct-gap semiconductor;Mak;Phys Rev Lett,2010

3. Electronics based on two-dimensional materials;Fiori;Nat Nanotechnol,2014

4. MoS2 transistors with 1-nanometer gate lengths;Desai;Science,2016

5. 2D transition metal dichalcogenides;Manzeli;Nat Rev Mater,2017

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