Controlled epitaxial growth of strain-induced large-area bilayer MoS2 by chemical vapor deposition based on two-stage strategy-Reference-Cited by-同舟云学术

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Controlled epitaxial growth of strain-induced large-area bilayer MoS2 by chemical vapor deposition based on two-stage strategy

Published:2024-08 Issue: Volume:46 Page:101501
ISSN:2542-5293
Container-title:Materials Today Physics
language:en
Short-container-title:Materials Today Physics

Author:

Wang Kaiyi,Xu Ruoyan,Gao Fenglin,Xu Shiyao,Hao Shijie,Fan Chen,Zhang Yuan,Wei Yuehua,Xue Xiongxiong,Hao Guolin^ORCID

Funder

Scientific Research Foundation of Hunan Provincial Education Department

National Natural Science Foundation of China

Basic and Applied Basic Research Foundation of Guangdong Province

Key Project of Research and Development Plan of Hunan Province

Key Research and Development Program of Hunan Province of China

Education Department of Hunan Province

Publisher

Elsevier BV

Reference48 articles.

1. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides;Wang;Nat. Nanotechnol.,2012

2. Photonics and optoelectronics of 2D semiconductor transition metal dichalcogenides;Mak;Nat. Photonics,2016

3. Spin and pseudospins in layered transition metal dichalcogenides;Xu;Nat. Phys.,2014

4. Electrical generation and control of the valley carriers in a monolayer transition metal dichalcogenide;Ye;Nat. Nanotechnol.,2016

5. Controllable growth of wafer-scale two-dimensional WS2 with outstanding optoelectronic properties;Zhang;2D Mater.,2024

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