Monte-Carlo investigation of in-plane electron transport in tensile strained Si and Si1−yCy(y ≤ 0.03)-Reference-Cited by-同舟云学术

Monte-Carlo investigation of in-plane electron transport in tensile strained Si and Si1−yCy(y ≤ 0.03)

Published:1999-07 Issue:1 Volume:7 Page:73-77
ISSN:1286-0042
Container-title:The European Physical Journal Applied Physics
language:
Short-container-title:Eur. Phys. J. AP

Author:

Dollfus Ph.,Galdin S.,Hesto P.

Publisher

EDP Sciences

Subject

Condensed Matter Physics,Instrumentation,Electronic, Optical and Magnetic Materials

Link

http://epjap.epj.org/10.1051/epjap:1999200/pdf

Reference28 articles.

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2. 113-GHz f/sub T/ graded-base SiGe HBT's

3. SiGe-HBTs with high fT at moderate current densities

4. SiGe-channel heterojunction p-MOSFET's

5. P. Bouillon, T. Skotnicki, C. Kelaidis, R. Gwoziecki, P. Dollfus, J.-L. Regolini, I. Sagnes, S. Bodnar,IEDM Tech. Dig., San Francisco, USA, 1996, p. 559.

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