Growth of Strain-Relaxed Si1-yCyFilms with Compositionally Graded Buffer Layers by Gas Source Molecular Beam Epitaxy
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference8 articles.
1. High‐mobilityp‐channel metal‐oxide‐semiconductor field‐effect transistor on strained Si
2. Growth of strain relaxed Si1−yCy on Si buffer layer by gas-source MBE
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4. Strain relaxation of graded SiGe buffers grown at very high rates
5. Evolution of strain relaxation in step‐graded SiGe/Si structures
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1. Thermal stability of compressively strained Si/relaxed Si 1-x C x heterostructures formed on Ar ion implanted Si (100) substrates;Materials Science in Semiconductor Processing;2017-11
2. Study on ion implantation conditions in fabricating compressively strained Si/relaxed Si 1−x C x heterostructures using the defect control by ion implantation technique;Journal of Crystal Growth;2017-06
3. Compressively strained Si/Si1−xCxheterostructures formed on Ar ion implanted Si(100) substrates;Japanese Journal of Applied Physics;2016-02-01
4. Gas-source MBE growth of strain-relaxed Si1−xCx on Si(100) substrates;Journal of Crystal Growth;2013-09
5. Formation of compressively strained Si/Si1−xCx/Si(100) heterostructures using gas-source molecular beam epitaxy;Journal of Crystal Growth;2013-01
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