Implantation of 18O+ ions in channelling directions of aluminium, copper and nickel single crystals - I. — Experimental conditions and range profile determination
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EDP Sciences
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http://jphys.journaldephysique.org/10.1051/jphys:01980004105040300/pdf
Reference16 articles.
1. The Dependence of Electronic Stopping Cross Section of 42K on Different Target Materials
2. Implantation of18O+ions in copper single crystals: determination of the stopping power of copper for channelled oxygen ions
3. Channeling of medium-mass ions through silicon
4. Energy loss of heavy ions along low-index directions in gold single crystals
5. Range Measurements in Oriented Tungsten Single Crystals (0.1-1.0 MeV). I. Electronic and Nuclear Stopping Powers
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Channelling effect on helium implantation behavior in copper single crystal;Scripta Metallurgica et Materialia;1992-01
2. Implantation profiles of 18O in Al, Si, Mg, Al2O3, MgO and MgAl2O4;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1990-10
3. Critical exponents for the self-avoiding random walk in three dimensions;Journal of Statistical Physics;1987-10
4. Relations between the Coulomb gas picture and conformal invariance of two-dimensional critical models;Journal of Statistical Physics;1987-10
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