Implantation profiles of 18O in Al, Si, Mg, Al2O3, MgO and MgAl2O4

Author:

Allen W.R.,Lewis M.B.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference42 articles.

1. Ion implantation and annealing of crystalline oxides

2. Backscattering Spectrometry;Chu,1978

3. A Monte Carlo computer program for the transport of energetic ions in amorphous targets

4. The Stopping and Range of Ions in Solids;Ziegler,1985

Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Depth resolution and dynamic range of 18O(p,α)15N depth profiling;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1998-03

2. Departures from Bragg's rule of stopping power additivity for ions in dosimetric and related materials;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1992-06

3. Analysis of oxygen by charged particle bombardment;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1992-03

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