Influence of temperature on the electronic properties of Siδ-doped GaAs structures
Author:
Publisher
EDP Sciences
Subject
Condensed Matter Physics,Instrumentation,Electronic, Optical and Magnetic Materials
Link
http://www.epjap.org/10.1051/epjap:2002111/pdf
Reference15 articles.
1. Formation of subbands in δ-doped semiconductors
2. Delta doping of III–V compound semiconductors: Fundamentals and device applications
3. Single‐electron memory
4. Saturation of the free-electron concentration in delta -doped GaAs: the DX centre in two dimensions
5. Spatial localization and diffusion of atomic silicon in delta-doped GaAs
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1. Nonlinear intersubband absorption and refractive index change in n-type δ-doped GaAs for different donor distributions;The European Physical Journal Plus;2015-01
2. Exciton states in GaAs systems under magnetic fields and hydrostatic pressure;Physica B: Condensed Matter;2013-04
3. Self-consistent calculation of transport properties in Si GaAs quantum wells as a function of the temperature;Physica B: Condensed Matter;2010-10
4. Subband structure ofp-typeδ-doped GaAs as dependent on the acceptor concentration and the layer thickness;The European Physical Journal Applied Physics;2008-03
5. Intersubband optical absorption of double Si δ-doped GaAs layers;Superlattices and Microstructures;2004-01
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