Evolution of defect structure of Ge-implanted Si crystal during nanosecond laser annealing-Reference-Cited by-同舟云学术

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Evolution of defect structure of Ge-implanted Si crystal during nanosecond laser annealing

Published:2004-07 Issue:1-3 Volume:27 Page:149-153
ISSN:1286-0042
Container-title:The European Physical Journal Applied Physics
language:
Short-container-title:Eur. Phys. J. Appl. Phys.

Author:

Klinger D.,Auleytner J.,Żymierska D.,Kozankiewicz B.,Barcz A.,Nowicki L.,Stonert A.

Publisher

EDP Sciences

Subject

Condensed Matter Physics,Instrumentation,Electronic, Optical and Magnetic Materials

Link

http://epjap.epj.org/10.1051/epjap:2004133/pdf

Reference22 articles.

1. Electrical signatures and thermal stability of interstitial clusters in ion implanted Si

2. Effect of implant temperature on secondary defects created by MeV Sn implantation in silicon

3. Cross-sectional transmission electron microscopy analysis of {311} defects from Si implantation into silicon

4. Effect of ion mass on the evolution of extended defects during annealing of MeV ion-implanted p-type Si

5. Mechanism for the reduction of interstitial supersaturations in MeV-implanted silicon

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Demonstration of a low power and high-speed graphene/silicon heterojunction near-infrared photodetector;Nanoscale Advances;2024

2. Surface morphology created by nanosecond laser annealing of amorphised Si layer—Investigations by complementary methods;Radiation Physics and Chemistry;2011-10

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