Surface morphology created by nanosecond laser annealing of amorphised Si layer—Investigations by complementary methods-Reference-Cited by-同舟云学术

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Surface morphology created by nanosecond laser annealing of amorphised Si layer—Investigations by complementary methods

Published:2011-10 Issue:10 Volume:80 Page:1031-1035
ISSN:0969-806X
Container-title:Radiation Physics and Chemistry
language:en
Short-container-title:Radiation Physics and Chemistry

Author:

Klinger D.,łusakowska E.,Kret S.,Kozankiewicz B.,Żymierska D.

Publisher

Elsevier BV

Subject

Radiation

Reference16 articles.

1. Laser-induced explosion boiling during nanosecond laser ablation of silicon;Craciun;Appl. Surf. Sci.,2002

2. Comparison of structure and properties of femtosecond and nanosecond laser-structured silicon;Crouch;Appl. Phys. Lett.,2004

3. Extended defect structure induced by pulsed laser annealing in Ge implanted Si crystal;Klinger;J. Alloys Compd.,2001

4. Recrystallization and dopant diffusion in amorphised germanium layers upon pulsed laser annealing;Klinger;J. Alloys Compd.,2004

5. Evolution of defect structure of Ge-implanted Si crystal during nanosecond laser annealing;Klinger;Eur. Phys. J. Appl. Phys.,2004

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