Is actinometry reliable for monitoring Si and silicone halides produced in silicon etching plasmas? A comparison with their absolute densities measured by UV broad band absorption-Reference-Cited by-同舟云学术

Is actinometry reliable for monitoring Si and silicone halides produced in silicon etching plasmas? A comparison with their absolute densities measured by UV broad band absorption

Published:2006-02-22 Issue:3 Volume:33 Page:205-212
ISSN:1286-0042
Container-title:The European Physical Journal Applied Physics
language:
Short-container-title:Eur. Phys. J. Appl. Phys.

Author:

Kogelschatz M.,Cunge G.,Sadeghi N.

Publisher

EDP Sciences

Subject

Condensed Matter Physics,Instrumentation,Electronic, Optical and Magnetic Materials

Link

http://epjap.epj.org/10.1051/epjap:2006021/pdf

Reference32 articles.

1. M.A. Lieberman, A.J. Lichtenberg,Principle of plasma discharges and material processing(Jones Wiley & Sons, New York, 1994)

2. ITRS,International Technology Roadmap for Semiconductors(2002), http://public.itrs.net

3. Impact of chemistry on profile control of resist masked silicon gates etched in high density halogen-based plasmas

4. Chemical topography analyses of silicon gates etched in HBr/Cl[sub 2]/O[sub 2] and HBr/Cl[sub 2]/O[sub 2]/CF[sub 4] high density plasmas

5. Ion flux composition in HBr/Cl[sub 2]/O[sub 2] and HBr/Cl[sub 2]/O[sub 2]/CF[sub 4] chemistries during silicon etching in industrial high-density plasmas

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