Tungsten metal gate etching in Cl2∕O2 inductively coupled high density plasmas-Reference-Cited by-同舟云学术

Tungsten metal gate etching in Cl2∕O2 inductively coupled high density plasmas

Published:2008-11 Issue:6 Volume:26 Page:1875-1882
ISSN:1071-1023
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:en
Short-container-title:J. Vac. Sci. Technol. B

Author:

Morel T.¹,Bamola S.²,Ramos R.³,Beaurain A.³,Pargon E.³,Joubert O.³

Affiliation:

1. STMicroelectronics, 850 rue Jean Monnet, 38926 Crolles Cedex, France and Laboratoire des Technologies de la Microélectronique (CNRS-LTM), 17 rue des Martyrs 38054, Cedex 09, Grenoble, France

2. CEA-LETI Minatec, 17 rue des Martyrs 38054, Cedex 09, Grenoble, France

3. Laboratoire des Technologies de la Microélectronique (CNRS-LTM), 17 rue des Martyrs 38054, Cedex 09, Grenoble, France

Publisher

American Vacuum Society

Subject

Electrical and Electronic Engineering,Condensed Matter Physics

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