WO3 and W Thermal Atomic Layer Etching Using “Conversion-Fluorination” and “Oxidation-Conversion-Fluorination” Mechanisms-Reference-Cited by-同舟云学术

WO3 and W Thermal Atomic Layer Etching Using “Conversion-Fluorination” and “Oxidation-Conversion-Fluorination” Mechanisms

Published:2017-09-21 Issue:39 Volume:9 Page:34435-34447
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Johnson Nicholas R.¹,George Steven M.¹^ORCID

Affiliation:

1. Department of Chemistry and Biochemistry, and ‡Department of Mechanical Engineering, University of Colorado, Boulder, Colorado 80309, United States

Funder

Semiconductor Research Corporation

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.7b09161

Reference67 articles.

1. Atomic Layer Etching: An Industry Perspective

2. Atomic Layer Etching: What Can We Learn from Atomic Layer Deposition?

3. Atomic Layer Deposition: An Overview

4. Crystallinity of inorganic films grown by atomic layer deposition: Overview and general trends

5. Overview of atomic layer etching in the semiconductor industry

Cited by 71 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Atomic layer etching of SiO2 using sequential exposures of Al(CH3)3 and H2/SF6 plasma;Journal of Vacuum Science & Technology A;2024-09-01

2. Limiting or Continuous Thermal Etching of First Row Transition Metal Oxides Using Acetylacetone and Ozone;Chemistry of Materials;2024-08-02

3. Enhanced Deposition Selectivity of High-k Dielectrics by Vapor Dosing and Selective Removal of Phosphonic Acid Inhibitors;ACS Applied Materials & Interfaces;2024-07-01

4. Thermal Atomic Layer Etching of Gold Using Sulfuryl Chloride for Chlorination and Triethylphosphine for Ligand Addition;Chemistry of Materials;2024-05-13

5. CMOS Scaling for the 5 nm Node and Beyond: Device, Process and Technology;Nanomaterials;2024-05-09