Investigation of InP etching mechanisms in a Cl2/H2 inductively coupled plasma by optical emission spectroscopy-Reference-Cited by-同舟云学术

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Investigation of InP etching mechanisms in a Cl2/H2 inductively coupled plasma by optical emission spectroscopy

Published:2009-03 Issue:2 Volume:27 Page:262-275
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Gatilova L.,Bouchoule S.,Guilet S.,Chabert P.

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.3071950

Cited by 21 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Chlorine-Assisted Growth of Epitaxial InGaN and AlGaN Crystals at Low Temperatures Using Plasma-Enhanced Chemical Vapor Deposition;Crystal Growth & Design;2022-12-21

2. The Method of Low-Temperature ICP Etching of InP/InGaAsP Heterostructures in Cl2-Based Plasma for Integrated Optics Applications;Micromachines;2021-12-10

3. Plasma processing for advanced microelectronics beyond CMOS;Journal of Applied Physics;2021-08-28

4. Anisotropic and low damage III-V/Ge heterostructure etching for multijunction solar cell fabrication with passivated sidewalls;Micro and Nano Engineering;2021-06

5. Control of surface oxide formation in plasma-enhanced quasiatomic layer etching of tantalum nitride;Journal of Vacuum Science & Technology A;2020-03

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