The characterization and properties of InN grown by MOCVD
Author:
Publisher
EDP Sciences
Subject
Condensed Matter Physics,Instrumentation,Electronic, Optical and Magnetic Materials
Link
http://epjap.epj.org/10.1051/epjap:2008158/pdf
Reference15 articles.
1. Indium nitride (InN): A review on growth, characterization, and properties
2. III–nitrides: Growth, characterization, and properties
3. The high mobility InN film grown by MOCVD with GaN buffer layer
4. Low-temperature MOCVD growth of InN buffer layers with indium pre-deposition technology
5. MOCVD growth of InN using a GaN buffer
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1. The effective role of time in synthesising InN by chemical method at low temperature;Journal of Materials Science: Materials in Electronics;2014-01-28
2. Optical and structural properties of indium nitride nanoparticles synthesized by chemical method at low temperature;Solar Energy;2013-11
3. A DFT study of reaction pathways of NH3 decomposition on InN (0001) surface;The Journal of Chemical Physics;2012-08-07
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