Low-temperature MOCVD growth of InN buffer layers with indium pre-deposition technology
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference17 articles.
1. RF-Molecular Beam Epitaxy Growth and Properties of InN and Related Alloys
2. Growth of High-Quality Epitaxial InN Film with High-Speed Reactant Gas by Organometallic Vapor-Phase Epitaxy
3. High-Quality InN Film Grown on a Low-Temperature-Grown GaN Intermediate Layer by Plasma-Assisted Molecular-Beam Epitaxy
4. Experimental Consideration of Optical Band-Gap Energy of Wurtzite InN
5. Initial stages of InN thin film growth onto MgAl2O4(111) and α-Al2O3(00·1) substrates
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1. Phase transition of InN films via trimethylindium flows;Experimental and Theoretical NANOTECHNOLOGY;2020-01-15
2. A molten salt-based nitridation approach for synthesizing nanostructured InN electrode materials;RSC Advances;2020
3. Synthesis of particulate InN crystal by the reaction of InCl3 with LiNH2;Journal of the Ceramic Society of Japan;2012
4. Wurtzite to zincblende transition of InN films on (011) SrTiO3 by decreasing trimethylindium flows;Applied Physics A;2011-11-06
5. Synthesis of InN nanowires grown on droplets formed with Au and self-catalyst on Si(111) by using metalorganic chemical vapor deposition;Journal of Materials Research;2010-09
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