Application of orthodox defect-selective etching for studying GaN single crystals, epitaxial layers and device structures
Author:
Publisher
EDP Sciences
Subject
Condensed Matter Physics,Instrumentation,Electronic, Optical and Magnetic Materials
Link
http://www.epjap.org/10.1051/epjap:2004103/pdf
Reference12 articles.
1. Dislocation Etch Pits in GaN Epitaxial Layers Grown on Sapphire Substrates
2. Reduction of Etch Pit Density in Organometallic Vapor Phase Epitaxy-Grown GaN on Sapphire by Insertion of a Low-Temperature-Deposited Buffer Layer between High-Temperature-Grown GaN
3. Evaluation of nanopipes in MOCVD grown (0001) GaN/Al2O3 by wet chemical etching
4. Gallium nitride whiskers formed by selective photoenhanced wet etching of dislocations
5. Recent advances in defect-selective etching of GaN
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