Modulated photocurrent to characterize the density of states of thin film semiconductors in the recombination regime
Author:
Publisher
EDP Sciences
Subject
Condensed Matter Physics,Instrumentation,Electronic, Optical and Magnetic Materials
Link
http://www.epjap.org/10.1051/epjap:2004025/pdf
Reference22 articles.
1. Phase‐shift analysis of modulated photocurrent: Its application to the determination of the energetic distribution of gap states
2. An evaluation of phase-shift analysis of modulated photocurrents
3. General analysis of the modulated-photocurrent experiment including the contributions of holes and electrons
4. Trapping and recombination via dangling bonds in amorphous and glassy semiconductors under steady-state conditions: Application to the modulated photocurrent experiment
5. Spatially resolved and energy-resolved defect kinetics ina-Si:H: A comprehensive study by phase-shift analysis of modulated photocurrents
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1. Characterization of Semiconductors from Photoconductivity Techniques: Uniform and Monochromatic Illumination;Photoconductivity and Photoconductive Materials;2022-06-17
2. New insight into the modulated photocurrent technique using 2D full numerical simulations;physica status solidi (a);2016-03-15
3. Determination of trapping–detrapping events, recombination processes and gap-state parameters by modulated photocurrent measurements on amorphous silicon;Philosophical Magazine;2014-05-15
4. a-Si:H transport parameters from experiments based on photoconductivity;Journal of Non-Crystalline Solids;2012-09
5. Structural and electronic properties of hydrogenated polymorphous silicon films deposited at high rate;Journal of Applied Physics;2011-01-15
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