Testing of flexible InGaZnO-based thin-film transistors under mechanical strain
Author:
Publisher
EDP Sciences
Subject
Condensed Matter Physics,Instrumentation,Electronic, Optical and Magnetic Materials
Link
http://epjap.epj.org/10.1051/epjap/2011100416/pdf
Reference13 articles.
1. Amorphous-Silicon Thin-Film Transistors Fabricated at 300 $^{\circ}\hbox{C}$ on a Free-Standing Foil Substrate of Clear Plastic
2. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
3. Amorphous oxide TFT and their applications in electrophoretic displays
4. The Instability of a-Si:H TFT under Mechanical Strain with High Frequency ac Bias Stress
5. a-Si:H thin film transistors after very high strain
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